Atomic level defects, such as atoms of differing mass, vacancies etc. can be introduced by
adding dopants
or by ion bombardment.
A high correlation has been found between the scaled index and helical twisting power for a range of
chiral dopants.
Dopant atoms
into the silicon to make these layers; ion implantation.
Dopants in semiconductors: the conversion of deep level defects into shallow ones.
We consider
random discrete dopants, trapped charges, atomic-scale interface roughness, and line edge roughness as sources of intrinsic parameter fluctuations.
Dopant activation
and deactivation studied.
Dopants in the active region
of this device enables the emission wavelength to be tuned.
Similar defects are also likely to account for the low activation efficiencies of
other dopants
in different materials, eg.
Dopant concentrations
in semiconductor devices.
We consider random
discrete dopants, trapped charges, atomic-scale interface roughness, and line edge roughness as sources of intrinsic parameter fluctuations.
Dopant distribution
in a sic mesfet.
Dopant profiles
as analyzed in aes.
Dopant diffusion
and atomic interactions, in collaboration with phd colleagues working on modeling.
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